Adularia PL/XL measurement, 5 kV x-ray beam, Correcher and García-Guinea 2001
Measurement details
Reference | Correcher and García-Guinea 2001 Correcher V. and García-Guinea J. (2001). On the luminescence properties of adularia feldspar. Journal of Luminescence, 93, pp303–312 https://doi.org/10.1016/S0022-2313(01)00201-0 |
Material | Adularia [ KAlSi3O8 ] |
Specimen | ASGS adularia [Museo Nacional de Ciencias Naturales], Saint-Gotthard Massif, Ticino, Switzerland |
Technique | X-ray photoluminescence |
Probe | X-ray beam |
Tube voltage | 5 kV |
Anode current | 5 mA |
Lines | Al-O- -Al 433 nm (20.9%), Defect 298 nm (10.2%), Fe3+ 691 nm (10.7%), Lattice defect 363 nm (10.7%), Mn2+ 551 nm (7.3%), Ti4+ 476 nm (40.1%) |
Composition
Element | Atoms | At% | Wt% |
---|---|---|---|
Na | 0.09 | 0.692 | 0.747 |
K | 0.91 | 7 | 12.9 |
Al | 1 | 7.69 | 9.74 |
Si | 3 | 23.1 | 30.4 |
O | 8 | 61.5 | 46.2 |