Adularia PL/XL measurement, 5 kV x-ray beam, Correcher and García-Guinea 2001
Measurement details
| Reference | Correcher and García-Guinea 2001 Correcher V. and García-Guinea J. (2001). On the luminescence properties of adularia feldspar. Journal of Luminescence, 93, pp303–312 https://doi.org/10.1016/S0022-2313(01)00201-0 |
| Material | Adularia [ KAlSi3O8 ] |
| Analysis technique | X-ray photoluminescence |
| Probe | X-ray beam |
| Tube voltage | 5 kV |
| Anode current | 5 mA |
| Lines | Al-O- -Al 433 nm (20.9%), {{linesearch:e1f9d6b9-14c5-4b68-b62f-dd431eb476d8|Defect}}: 298 nm (10.2%), {{linesearch:45f0bb3c-8286-4f05-9ee2-2dbeb38785e3|Fe3+}}: 691 nm (10.7%), {{linesearch:c8ea806a-6633-4771-bc3b-c9e4587f7dde|Lattice defect}}: 363 nm (10.7%), {{linesearch:55ad2e10-738d-4524-9ea8-e04f0afced5c|Mn2+}}: 551 nm (7.3%), {{linesearch:1e01196e-ceb7-4467-8629-dcb9104fa7f4|Ti4+}}: 476 nm (40.1%) |
Specimen details
| Name | ASGS adularia |
| Owner | MNCN |
| Locality | Saint-Gotthard Massif, Ticino, Switzerland |
| Other measurements | Adularia CL measurement, 10 keV e- beam, Correcher and García-Guinea 2001 |
Composition
| Element | Atoms | At% | Wt% |
|---|---|---|---|
| Na | 0.09 | 0.692 | 0.747 |
| K | 0.91 | 7 | 12.9 |
| Al | 1 | 7.69 | 9.74 |
| Si | 3 | 23.1 | 30.4 |
| O | 8 | 61.5 | 46.2 |
| Total | 13 | 100 | 100 |