Cadmium silicon selenide CL/SEM measurement, e<sup>-</sup> beam, 78K, Odin <i>et al.</i> 2001

Cadmium silicon selenide CL/SEM measurement, e^- beam, 78K, Odin et al. 2001

Reference	Odin et al. 2001 Odin I. N., Chukichev M. V., Ivanov V. A. & Rubina M. E. (2001). Cathodoluminescence of Cd4SiS6, Cd4SiSe6, and Si-doped CdS, CdSe, and CdTe crystals. Inorganic Materials, 37(5), 445-448. DOI: https://doi.org/10.1023/A:1017560313477
Material	Cadmium silicon selenide [ Cd₄SiSe₆ ]
Specimen temperature	78K
Technique	Cathodoluminescence (CL), using a Scanning Electron Microscope (SEM)
Probe	Electron beam
Lines	Unspecified 920 nm, 591 nm

Nominal composition of Cadmium silicon selenide [ Cd₄SiSe₆ ].
Element	Atoms	At%	Wt%
Cd	4	36.4	47.3
Si	1	9.09	2.95
Se	6	54.5	49.8