Sapphire (var. Eu doped) CL/SEM measurement, 10 keV e<sup>-</sup> beam, Can <i>et al.</i> 1995

Sapphire (var. Eu doped) CL/SEM measurement, 10 keV e^- beam, Can et al. 1995

Reference	Can et al. 1995 Can N., Townsend P. D., Hole D. E., Snelling H. V., Ballesteros J. M. & Afonso C. N. (1995). Enhancement of luminescence by pulse laser annealing of ion‐implanted europium in sapphire and silica. Journal of Applied Physics, 78(11), 6737-6744. DOI: https://doi.org/10.1063/1.360497
Material	Sapphire (var. Eu doped) [ Al₂O₃:Eu ]
Specimen temperature	Ambient
Analysis technique	Cathodoluminescence (CL), using a Scanning Electron Microscope (SEM)
Probe	10 keV electron beam
Probe diameter	2000 μm
Lines	Cr³⁺ 694 nm, {{linesearch:a54d2dbd-afbb-47d9-b0cb-6b6f8ae7dacb\|Eu³⁺}}: 622 nm, {{linesearch:c1c0f781-17b5-44ff-81bf-c591ec82fe28\|Intrinsic}}: 340 nm

Nominal composition of Sapphire (var.Eu doped) [ Al₂O₃:Eu ].
Element	Atoms	At%	Wt%
Eu	?	?	?
Al	2	40	52.9
O	3	60	47.1
Total	5	100	100