Sapphire (var. Eu doped) CL/SEM measurement, 10 keV e- beam, Can et al. 1995
Measurement details
| Reference | Can et al. 1995 Can N., Townsend P. D., Hole D. E., Snelling H. V., Ballesteros J. M. & Afonso C. N. (1995). Enhancement of luminescence by pulse laser annealing of ion‐implanted europium in sapphire and silica. Journal of Applied Physics, 78(11), 6737-6744. DOI: https://doi.org/10.1063/1.360497 |
| Material | Sapphire (var. Eu doped) [ Al2O3:Eu ] |
| Specimen temperature | Ambient |
| Technique | Cathodoluminescence (CL), using a Scanning Electron Microscope (SEM) |
| Probe | 10 keV electron beam |
| Probe diameter | 2000 μm |
| Lines | Cr3+ 694 nm, Eu3+ 622 nm, Intrinsic 340 nm |
Composition
| Element | Atoms | At% | Wt% |
|---|---|---|---|
| Eu | ? | ? | ? |
| Al | 2 | 40 | 52.9 |
| O | 3 | 60 | 47.1 |