Adularia CL measurement, 10 keV e- beam, Correcher and García-Guinea 2001
Measurement details
| Reference | Correcher and García-Guinea 2001 Correcher V. and García-Guinea J. (2001). On the luminescence properties of adularia feldspar. Journal of Luminescence, 93, pp303–312 https://doi.org/10.1016/S0022-2313(01)00201-0 |
| Material | Adularia [ KAlSi3O8 ] |
| Specimen temperature | Ambient |
| Analysis technique | Cathodoluminescence (CL) |
| Probe | 10 keV electron beam |
| Beam current | 400 nA |
| Lines | Al-O- -Al 424 nm (22.2%), {{linesearch:fdd37d56-da4b-48a3-8206-04a965945a00|Defect}}: 293 nm (8.8%), {{linesearch:b54725ca-a71f-4d6c-bc2a-e59e1c6a2add|Fe3+}}: 690 nm (18.9%), {{linesearch:d014f4c3-cd3f-4d09-aa19-4b2ae996575d|Lattice defect}}: 375 nm (10%), {{linesearch:53128834-98be-4c45-9cc4-5cac25714ae5|Mn2+}}: 566 nm (8.9%), {{linesearch:6b7499f4-7921-42ab-a0b2-0a6435b8f942|Ti4+}}: 475 nm (31.1%) |
Specimen details
| Name | ASGS adularia |
| Owner | MNCN |
| Locality | Saint-Gotthard Massif, Ticino, Switzerland |
| Other measurements | Adularia PL/XL measurement, 5 kV x-ray beam, Correcher and García-Guinea 2001 |
Composition
| Element | Atoms | At% | Wt% |
|---|---|---|---|
| Na | 0.09 | 0.692 | 0.747 |
| K | 0.91 | 7 | 12.9 |
| Al | 1 | 7.69 | 9.74 |
| Si | 3 | 23.1 | 30.4 |
| O | 8 | 61.5 | 46.2 |
| Total | 13 | 100 | 100 |