Indium gallium nitride CL/SEM measurement, 20 keV e- beam, Choi et al. 2003
Measurement details
| Reference | Choi et al. 2003 Choi H. W., Jeon C. W., Dawson M. D., Edwards P. R., Martin R. W. & Tripathy S. (2003). Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes. Journal of Applied Physics, 93(10), 5978-5982. DOI: https://doi.org/10.1063/1.1567803 |
| Material | Indium gallium nitride [ InGaN ] |
| Specimen temperature | Ambient |
| Technique | Cathodoluminescence (CL), using a Scanning Electron Microscope (SEM) |
| Instrument | Cameca SX100 |
| Probe | 20 keV electron beam |
| Beam current | 1 nA |
| Probe diameter | 1 μm |
| Det. technology | Charge-coupled device (CCD) |
| Line | Band gap 460 nm |
Composition
| Element | Atoms | At% | Wt% |
|---|---|---|---|
| In | 1 | 33.3 | 57.8 |
| Ga | 1 | 33.3 | 35.1 |
| N | 1 | 33.3 | 7.05 |