Indium gallium nitride CL/SEM measurement, 20 keV e- beam, Choi et al. 2003

Measurement details

Reference Choi et al. 2003
Choi H. W., Jeon C. W., Dawson M. D., Edwards P. R., Martin R. W. & Tripathy S. (2003). Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes. Journal of Applied Physics, 93(10), 5978-5982. DOI: https://doi.org/10.1063/1.1567803
Material Indium gallium nitride [ InGaN ]
Specimen temperature Ambient
Technique Cathodoluminescence (CL), using a Scanning Electron Microscope (SEM)
Instrument Cameca SX100
Probe 20 keV electron beam
Beam current 1 nA
Probe diameter 1 μm
Det. technology Charge-coupled device (CCD)
Line Band gap 460 nm

Composition

Nominal composition of Indium gallium nitride [ InGaN ].
Element Atoms At% Wt%
In 1 33.3 57.8
Ga 1 33.3 35.1
N 1 33.3 7.05