Indium gallium nitride CL/SEM measurement, 20 keV e- beam, Choi et al. 2003
Measurement details
Reference | Choi et al. 2003 Choi H. W., Jeon C. W., Dawson M. D., Edwards P. R., Martin R. W. & Tripathy S. (2003). Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes. Journal of Applied Physics, 93(10), 5978-5982. DOI: https://doi.org/10.1063/1.1567803 |
Material | Indium gallium nitride [ InGaN ] |
Specimen temperature | Ambient |
Technique | Cathodoluminescence (CL), using a Scanning Electron Microscope (SEM) |
Instrument | Cameca SX100 |
Probe | 20 keV electron beam |
Beam current | 1 nA |
Probe diameter | 1 μm |
Det. technology | Charge-coupled device (CCD) |
Line | Band gap 460 nm |
Composition
Element | Atoms | At% | Wt% |
---|---|---|---|
In | 1 | 33.3 | 57.8 |
Ga | 1 | 33.3 | 35.1 |
N | 1 | 33.3 | 7.05 |